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WaferHome can manufacture the high quality FZ/MCZ Growth Siliocn Wafer
Specification for FZ/MCZ Growth Siliocn Wafer
Grade(等级) | Dimeter(直径) | Type/dopant(类型/掺杂) | Orientaion | carborn 10*E-6 | oxygen 10*E-6 | lifetime /us | thickness(厚度) | Resistivity(电阻率) | Flat |
Surface/Roughness(表面粗糙度) | Geometric parameter |
---|---|---|---|---|---|---|---|---|---|---|---|
FZ growth prime wafer | 25.4mm 50.8mm 76.5mm | P(Boron) N(Phos/As/Sb) intrinsic | <100> <111> or special orientation |
<=0.2 | <=0.1 | 300 - 1*10E4 | 400um+/-20 400um+/- 20 400um+/-20 | 1 - 100000 Ohm-cm /Customization |
N/A 16mm 22.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um |
100mm 125mm 150mm | P(Boron) N(Phos/As/Sb) intrinsic | <100> <111> or special orientation | <=0.2 | <=0.1 | 300 - 1*10E4 | 525um+/-20 625um+/-20 625um+/-20 | 1 - 100000 Ohm-cm /Customization | 32.5mm 42.5mm 57.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
200mm | P(Boron) N(Phos/As/Sb) intrinsic | <100> <111> or special orientation | <=0.2 | <=0.1 | 300 - 1*10E4 | 725um+/-20 | 1 - 100000 Ohm-cm /Customization | nothch/flat | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
300mm | P(Boron) N(Phos/As/Sb) intrinsic | <100> <111> or special orientation | <=0.2 | <=0.1 | 300 - 1*10E4 | 775um+/-20 | 1 - 100000 Ohm-cm /Customization | notch/flat | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
MCZ growth prime wafer | 25.4mm 50.8mm 76.5mm | P(Boron) N(Phos/As/Sb) intrinsic | <100> <111> or special orientation |
5 - 15 | <=0.2 | 50 - 1*10E4 | 200um+/- 20 100um+/-20 customization | 1 - 500 Ohm-cm /Customization |
N/A 16mm 22.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um |
100mm 125mm 150mm | P(Boron) N(Phos/As/Sb) intrinsic | <100> <111> or special orientation | 5 - 15 | <=0.2 | 50 - 1*10E4 | 100um+/-20 200um+/- 20 customization | 1 - 500 Ohm-cm /Customization | 32.5mm 42.5mm 57.5mm | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
200mm | P(Boron) N(Phos/As/Sb) intrinsic | <100> <111> or special orientation | 5 - 15 | <=0.2 | 50 - 1*10E4 | 100um+/-20 200um+/- 20 customization | 1 - 500 Ohm-cm /Customization | notch/flat | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
300mm | P(Boron) N(Phos/As/Sb) intrinsic | <100> <111> or special orientation | 5 - 15 | <=0.2 | 50 - 1*10E4 | 100um+/-20 200um+/- 20 customization | 1 - 500 Ohm-cm /Customization | notch/flat | polished/etched polished/polished | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um |